1.5V, 3V STROBE APPLICATIONS
DESCRIPTION
The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for
1.5V and 3V strobe applications.
FEATURES
* In applications where two NiCd batteries are used to provide 2.4V,
two 2SD879s are used.
* The charge time is approximately 1 second faster than that of
germanium transistors.
* Less power dissipation because of lWO Collector-to-Emitter Voltage
VCE(SAT), permitting more flashes of light to be emitted.
* Large current capacity and highly resistant to break-down.
* Excellent linearity of hFE in the region from low current to high current. |
